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Â· The Call of Duty 2 Single-player Problem Guide: How to Use Every Weapon From From The Call of Duty 2 Single-player Problem Guide: How to Use Every Weapon From �1. Field of the Invention
The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly to a semiconductor device having a wiring layer containing a low dielectric constant film as an interlayer insulating film and a method of manufacturing the semiconductor device.
2. Description of the Related Art
In recent years, as the demand for a high speed and a high integration of LSI has increased, the delay time of signals transmitted through a wiring layer due to the capacitance between the wiring lines has been disadvantageously increased. In order to solve the problem of the delay time of signals, various approaches of reducing the dielectric constant of the interlayer insulating film have been examined. For example, a low dielectric constant film has been used as an interlayer insulating film. Since the interlayer insulating film containing a low dielectric constant film shows a small dielectric constant, the capacitance between the wiring lines is reduced, whereby the delay time of signals can be reduced.
As a low dielectric constant film, a fluorine containing film such as a fluorine-containing silica film (FSG film), a fluorine containing film containing carbon, a fluorine containing film containing both fluorine and carbon, and a porous silica film can be given. In particular, the porous silica film has a low dielectric constant.
An interlayer insulating film is formed by adding an organic component such as a silane coupling agent and/or an organic binder to the above-mentioned low dielectric constant film and applying the mixture onto a substrate.
A conventional semiconductor device will be described with reference to the accompanying drawings. FIGS. 1A to 1D are cross-sectional views showing the steps of a conventional method of manufacturing a semiconductor device.
As shown in FIG. 1A, a patterned resist film 103 is formed on a silicon dioxide film 102 formed on a silicon substrate 101 by known lithographic techniques. By a known etching technique, the silicon dioxide film 102 is selectively removed to form an opening 107. In the opening 107, a porous silica film 108 with an opening portion 109 formed at the center is formed. In the opening portion 109, the patterned resist film 103 is embedded.

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